CHAPTER 1 The Crystal Structure of Solids 固體的晶體結(jié)構(gòu)
1.0 PREVIEW 概覽
1.1 SEMICONDUCTOR MATERIALS 半導(dǎo)體材料
1.2 TYPES OF SOLIDS 固體類型
1.3 SPACE LATTICES 空間點陣
1.3.1 Primitive and Unit Cell 原胞與晶胞
1.3.2 Basic Crystal Structures 基本晶體結(jié)構(gòu)
1.3.3 Crystal Planes and Miller Indices 晶面和米勒指數(shù)
1.3.4 The Diamond Structure 金剛石結(jié)構(gòu)
1.4 ATOMIC BONDING 原子價鍵
1.5 IMPERFECTIONS AND IMPURITIES IN SOLIDS 固體中的缺陷和雜質(zhì)
1.5.1 Imperfections in Solids 固體缺陷
1.5.2 Impurities in Solids 固體中的雜質(zhì)
Σ1.6 GROWTH OF SEMICONDUCTOR MATERIALS 半導(dǎo)體材料生長
1.6.1 Growth from a Melt 熔體生長
1.6.2 Epitaxial Growth 外延生長
Σ1.7 DEVICE FABRICATION TECHNIQUES: OXIDATION 器件制備技術(shù)：氧化
1.8 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 2 Theory of Solids 固體理論
2.0 PREVIEW 概覽
2.1 PRINCIPLES OF QUANTUM MECHANICS 量子力學(xué)的基本原理
2.1.1 Energy Quanta 能量子
2.1.2 Wave-Particle Duality Principle 波粒二象性
2.2 ENERGY QUANTIZATION AND PROBABILITY CONCEPTS 能量量子化和概率
2.2.1 Physical Meaning of the Wave Function 波函數(shù)的物理意義
2.2.2 The One-Electron Atom 單電子原子
2.2.3 Periodic Table 元素周期表
2.3 ENERGY-BAND THEORY 能帶理論
2.3.1 Formation of Energy Bands 能帶的形成
2.3.2 The Energy Band and the Bond Model 能帶與價鍵模型
2.3.3 Charge Carriers—Electrons and Holes 載流子——電子和空穴
2.3.4 Effective Mass 有效質(zhì)量
2.3.5 Metals, Insulators, and Semiconductors 金屬、 絕緣體和半導(dǎo)體
2.3.6 The k-Space Diagram k 空間能帶圖
2.4 DENSITY OF STATES FUNCTION 態(tài)密度函數(shù)
2.5 STATISTICAL MECHANICS 統(tǒng)計力學(xué)
2.5.1 Statistical Laws 統(tǒng)計規(guī)律
2.5.2 The Fermi-Dirac Distribution Function and the Fermi Energy 費米-狄拉克分布和費米能級
2.5.3 Maxwell-Boltzmann Approximation 麥克斯韋-玻爾茲曼近似
2.6 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 3 The Semiconductor in Equilibrium 平衡半導(dǎo)體
3.0 PREVIEW 概覽
3.1 CHARGE CARRIERS IN SEMICONDUCTORS 半導(dǎo)體中的載流子
3.1.1 Equilibrium Distribution of Electrons and Holes 電子和空穴的平衡分布
3.1.2 The n0 and p0 Equations 平衡電子和空穴濃度方程
3.1.3 The Intrinsic Carrier Concentration 本征載流子濃度
3.1.4 The Intrinsic Fermi-Level Position 本征費米能級的位置
3.2 DOPANT ATOMS AND ENERGY LEVELS 摻雜原子與能級
3.2.1 Qualitative Description 定性描述
3.2.2 Ionization Energy 電離能
3.2.3 Group III-V Semiconductors III-V族半導(dǎo)體
3.3 CARRIER DISTRIBUTIONS IN THE EXTRINSIC SEMICONDUCTOR 非本征半導(dǎo)體的載流子分布
3.3.1 Equilibrium Distribution of Electrons and Holes 電子和空穴的平衡分布
3.3.2 The n0 p0 Product n0 p0 積
Σ3.3.3 The Fermi-Dirac Integral 費米-狄拉克積分
3.3.4 Degenerate and Nondegenerate Semiconductors 簡并與非簡并半導(dǎo)體
3.4 STATISTICS OF DONORS AND ACCEPTORS 施主和受主的統(tǒng)計分布
3.4.1 Probability Function 概率分布函數(shù)
Σ3.4.2 Complete Ionization and Freeze-Out 完全電離與凍析
3.5 CARRIER CONCENTRATIONS—EFFECTS OF DOPING 載流子濃度——摻雜的影響
3.5.1 Compensated Semiconductors 補償半導(dǎo)體
3.5.2 Equilibrium Electron and Hole Concentrations 平衡電子和空穴濃度
3.6 POSITION OF FERMI ENERGY LEVEL—EFFECTS OF DOPING AND TEMPERATURE 費米能級的位置——摻雜和溫度的影響
3.6.1 Mathematical Derivation 數(shù)學(xué)推導(dǎo)
3.6.2 Variation of EF with Doping Concentration and Temperature EF 隨摻雜濃度和溫度的變化
3.6.3 Relevance of the Fermi Energy 費米能級的關(guān)聯(lián)性
Σ3.7 DEVICE FABRICATION TECHNOLOGY: DIFFUSION AND ION IMPLANTATION 器件制備技術(shù)：擴(kuò)散和離子注入
3.7.1 Impurity Atom Diffusion 雜質(zhì)原子擴(kuò)散
3.7.2 Impurity Atom Ion Implantation 離子注入
3.8 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 4 Carrier Transport and Excess Carrier Phenomena 載流子輸運和過剩載流子現(xiàn)象
4.0 PREVIEW 概覽
4.1 CARRIER DRIFT 載流子的漂移運動
4.1.1 Drift Current Density 漂移電流密度
4.1.2 Mobility Effects 遷移率
4.1.3 Semiconductor Conductivity and Resistivity 半導(dǎo)體的電導(dǎo)率和電阻率
4.1.4 Velocity Saturation 速度飽和
4.2 CARRIER DIFFUSION 載流子的擴(kuò)散運動
4.2.1 Diffusion Current Density 擴(kuò)散電流密度
4.2.2 Total Current Density 總電流密度
4.3 GRADED IMPURITY DISTRIBUTION 漸變雜質(zhì)分布
4.3.1 Induced Electric Field 感應(yīng)電場
4.3.2 The Einstein Relation 愛因斯坦關(guān)系
4.4 CARRIER GENERATION AND RECOMBINATION 載流子的產(chǎn)生與復(fù)合
4.4.1 The Semiconductor in Equilibrium 平衡半導(dǎo)體
4.4.2 Excess Carrier Generation and Recombination 過剩載流子的產(chǎn)生與復(fù)合
4.4.3 Generation-Recombination Processes 產(chǎn)生-復(fù)合過程
Σ4.5 THE HALL EFFECT 霍爾效應(yīng)
4.6 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 5 The pn Junction and Metal-Semiconductor Contact pn結(jié)和金屬-半導(dǎo)體接觸
5.0 PREVIEW 概覽
5.1 BASIC STRUCTURE OF THE PN JUNCTION PN結(jié)的基本結(jié)構(gòu)
5.2 THE PN JUNCTION—ZERO APPLIED BIAS 零偏PN結(jié)
5.2.1 Built-In Potential Barrier 內(nèi)建電勢
5.2.2 Electric Field 電場
5.2.3 Space Charge Width 空間電荷區(qū)寬度
5.3 THE PN JUNCTION—REVERSE APPLIED BIAS 反偏PN結(jié)
5.3.1 Space Charge Width and Electric Field 空間電荷區(qū)寬度與電場
5.3.2 Junction Capacitance 勢壘電容
5.3.3 One-Sided Junctions 單邊突變結(jié)
5.4 METAL-SEMICONDUCTOR CONTACT—RECTIFYING JUNCTION 金屬-半導(dǎo)體接觸——整流結(jié)
5.4.1 The Schottky Barrier 肖特基勢壘結(jié)
5.4.2 The Schottky Junction—Reverse Bias 反偏肖特基結(jié)
5.5 FORWARD APPLIED BIAS—AN INTRODUCTION 正偏結(jié)簡介
5.5.1 The pn Junction pn結(jié)
5.5.2 The Schottky Barrier Junction 肖特基勢壘結(jié)
5.5.3 Comparison of the Schottky Diode and the pn Junction Diode 肖特基二極管和pn結(jié)二極管的比較
Σ5.6 METAL-SEMICONDUCTOR OHMIC CONTACTS 金屬-半導(dǎo)體的歐姆接觸
Σ5.7 NONUNIFORMLY DOPED PN JUNCTIONS 非均勻摻雜PN結(jié)
5.7.1 Linearly Graded Junctions 線性緩變結(jié)
5.7.2 Hyperabrupt Junctions 超突變結(jié)
5.8 DEVICE FABRICATION TECHNIQUES: PHOTOLITHOGRAPHY, ETCHING, AND BONDING 器件制備技術(shù)：光刻、刻蝕和鍵合
5.8.1 Photomasks and Photolithography 光學(xué)掩膜版和光刻
5.8.2 Etching 刻蝕
5.8.3 Impurity Diffusion or Ion Implantation 雜質(zhì)擴(kuò)散或離子注入
5.8.4 Metallization, Bonding, and Packaging 金屬化、鍵合和封裝
5.9 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor MOS場效應(yīng)晶體管基礎(chǔ)
6.0 PREVIEW 概覽
6.1 THE MOSFIELD-EFFECT TRANSISTOR ACTION MOS場效應(yīng)晶體管作用
6.1.1 Basic Principle of Operation 基本工作原理
6.1.2 Modes of Operation 工作模式
6.1.3 Amplification with MOSFETs MOSFET放大
6.2 THE TWO-TERMINAL MOSCAPACITOR 雙端 MOS電容
6.2.1 Energy-Band Diagrams and Charge Distributions 能帶結(jié)構(gòu)和電荷分布
6.2.2 Depletion Layer Thickness 耗盡層厚度
6.3 POTENTIAL DIFFERENCES IN THE MOSCAPACITOR MOS電容的電勢差
6.3.1 Work Function Differences 功函數(shù)差
6.3.2 Oxide Charges 氧化層電荷
6.3.3 Flat-Band Voltage 平帶電壓
6.3.4 Threshold Voltage 閾值電壓
Σ6.3.5 Electric Field Profile 電場分布
6.4 CAPACITANCE-VOLTAGE CHARACTERISTICS 電容-電壓特性
6.4.1 Ideal C-V Characteristics 理想C-V 特性
Σ6.4.2 Frequency Effects 頻率影響
Σ6.4.3 Fixed Oxide and Interface Charge Effects 氧化層固定電荷和界面電荷的影響
6.5 THE BASIC MOSFETOPERATION MOSFET基本工作原理
6.5.1 MOSFETStructures MOSFET結(jié)構(gòu)
6.5.2 Current-Voltage Relationship—Basic Concepts 電流-電壓關(guān)系——基本概念
Σ6.5.3 Current-Voltage Relationship—Mathematical Derivation 電流-電壓關(guān)系——數(shù)學(xué)推導(dǎo)
6.5.4 Substrate Bias Effects 襯底偏置效應(yīng)
6.6 SMALL-SIGNAL EQUIVALENT CIRCUIT AND FREQUENCY LIMITATION FACTORS 小信號等效電路及頻率限制因素
6.6.1 Transconductance 跨導(dǎo)
6.6.2 Small-Signal Equivalent Circuit 小信號等效電路
6.6.3 Frequency Limitation Factors and Cutoff Frequency 頻率限制因素與截止頻率
Σ6.7 DEVICE FABRICATION TECHNIQUES 器件制備技術(shù)
6.7.1 Fabrication of an NMOS Transistor NMOS晶體管的制備
6.7.2 The CMOS Technology CMOS技術(shù)
6.8 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 7 Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts MOS場效應(yīng)晶體管的其他概念
7.0 PREVIEW 概覽
7.1 MOSFETSCALING MOSFET按比例縮小法則
7.1.1 Constant-Field Scaling 恒電場按比例縮小法則
7.1.2 Threshold Voltage—First Approximation 閾值電壓——一級近似
7.1.3 Generalized Scaling 一般按比例縮小法則
7.2 NONIDEAL EFFECTS 非理想效應(yīng)
7.2.1 Subthreshold Conduction 亞閾值電導(dǎo)
7.2.2 Channel Length Modulation 溝道長度調(diào)制效應(yīng)
7.2.3 Mobility Variation 溝道遷移率變化
7.2.4 Velocity Saturation 速度飽和
7.3 THRESHOLD VOLTAGE MODIFICATIONS 閾值電壓修正
7.3.1 Short-Channel Effects 短溝道效應(yīng)
7.3.2 Narrow-Channel Effects 窄溝道效應(yīng)
7.3.3 Substrate Bias Effects 襯底偏置效應(yīng)
7.4 ADDITIONAL ELECTRICAL CHARACTERISTICS 其他電學(xué)特性
7.4.1 Oxide Breakdown 氧化層擊穿
7.4.2 Near Punch-Through or Drain-Induced Barrier Lowering 臨界穿通或漏致勢壘降低
7.4.3 Hot Electron Effects 熱電子效應(yīng)
7.4.4 Threshold Adjustment by Ion Implantation 離子注入調(diào)整閾值電壓
7.5 DEVICE FABRICATION TECHNIQUES: SPECIALIZED DEVICES 器件制備技術(shù)：特種器件
7.5.1 Lightly Doped Drain Transistor 輕摻雜漏晶體管
7.5.2 The MOSFETon Insulator 絕緣體上 MOSFET
7.5.3 The Power MOSFET 功率 MOSFET
7.5.4 MOSMemory Device MOS存儲器
7.6 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 8 Nonequilibrium Excess Carriers in Semiconductors 半導(dǎo)體中的非平衡過剩載流子
8.0 PREVIEW 概覽
8.1 CARRIER GENERATION AND RECOMBINATION 載流子的產(chǎn)生與復(fù)合
8.2 ANALYSIS OF EXCESS CARRIERS 過剩載流子的分析
8.2.1 Continuity Equations 連續(xù)性方程
8.2.2 Time-Dependent Diffusion Equations 時間相關(guān)的擴(kuò)散方程
8.3 AMBIPOLAR TRANSPORT 雙極輸運
8.3.1 Derivation of the Ambipolar Transport Equation 雙極輸運方程的推導(dǎo)
8.3.2 Limits of Extrinsic Doping and Low Injection 非本征摻雜和小注入限制
8.3.3 Applications of the Ambipolar Transport Equation 雙極輸運方程的應(yīng)用
8.3.4 Dielectric Relaxation Time Constant 介電弛豫時間常數(shù)
8.3.5 Haynes-Shockley Experiment 海恩斯-肖克利實驗
8.4 QUASI-FERMI ENERGY LEVELS 準(zhǔn)費米能級
8.5 EXCESS CARRIER LIFETIME 過剩載流子的壽命
8.5.1 Shockley-Read-Hall Theory of Recombination 肖克利-里德-霍爾復(fù)合理論
8.5.2 Limits of Extrinsic Doping and Low Injection 非本征摻雜和小注入限制
8.6 SURFACE EFFECTS 表面效應(yīng)
8.6.1 Surface States 表面態(tài)
8.6.2 Surface Recombination Velocity 表面復(fù)合速度
8.7 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 9 The pn Junction and Schottky Diodes pn結(jié)二極管與肖特基二極管
9.0 PREVIEW 概覽
9.1 THE PN AND SCHOTTKY BARRIER JUNCTIONS REVISITED 回顧PN結(jié)和肖特基勢壘結(jié)
9.1.1 ThepnJunction pn結(jié)
9.1.2 The Schottky Barrier Junction 肖特基勢壘結(jié)
9.2 THE PN JUNCTION—IDEAL CURRENT-VOLTAGE RELATIONSHIP pn結(jié)——理想電流-電壓特性
9.2.1 Boundary Conditions 邊界條件
9.2.2 Minority-Carrier Distribution 少子分布
9.2.3 Ideal pn Junction Current 理想pn結(jié)電流
9.2.4 Summary of Physics 物理小結(jié)
9.2.5 Temperature Effects 溫度效應(yīng)
9.2.6 The “Short” Diode 短二極管
9.2.7 Summary of Results 小結(jié)
9.3 THE SCHOTTKY BARRIER JUNCTION—IDEAL CURRENT-VOLTAGE RELATIONSHIP 肖特基二極管——理想電流-電壓關(guān)系
9.3.1 The Schottky Diode 肖特基二極管
9.3.2 Comparison of the Schottky Diode and the pn Junction Diode 肖特基二極管與pn結(jié)二極管的比較
9.4 SMALL-SIGNAL MODEL OF THE PN JUNCTION PN結(jié)二極管的小信號模型
9.4.1 Diffusion Resistance 擴(kuò)散電阻
9.4.2 Small-Signal Admittance 小信號導(dǎo)納
9.4.3 Equivalent Circuit 等效電路
9.5 GENERATION-RECOMBINATION CURRENTS 產(chǎn)生-復(fù)合電流
9.5.1 Reverse-Bias Generation Current 反偏產(chǎn)生電流
9.5.2 Forward-Bias Recombination Current 正偏復(fù)合電流
9.5.3 Total Forward-Bias Current 總正偏電流
9.6 JUNCTION BREAKDOWN 結(jié)擊穿
9.7 CHARGE STORAGE AND DIODE TRANSIENTS 電荷存儲與二極管瞬態(tài)
9.7.1 The Turn-Off Transient 關(guān)瞬態(tài)
9.7.2 The Turn-On Transient 開瞬態(tài)
9.8 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 10 The Bipolar Transistor 雙極型晶體管
10.0 PREVIEW 概覽
10.1 THE BIPOLAR TRANSISTOR ACTION 雙極型晶體管的工作原理
10.1.1 The Basic Principle of Operation 基本工作原理
10.1.2 Simplified Transistor Current Relations 簡化的晶體管電流關(guān)系
10.1.3 The Modes of Operation 工作模式
10.1.4 Amplification with Bipolar Transistors 雙極型晶體管放大電路
10.2 MINORITY-CARRIER DISTRIBUTION 少子分布
10.2.1 Forward-Active Mode 正向有源模式
10.2.2 Other Modes of Operation 其他工作模式
10.3 LOW-FREQUENCY COMMON-BASE CURRENT GAIN 低頻共基極電流增益
10.3.1 Contributing Factors 貢獻(xiàn)因子
10.3.2 Mathematical Derivation of Current Gain Factors 電流增益系數(shù)的數(shù)學(xué)推導(dǎo)
10.3.3 Summary and Review 小結(jié)與回顧
10.3.4 Example Calculations of the Gain Factors 增益系數(shù)的計算實例
10.4 NONIDEAL EFFECTS 非理想效應(yīng)
10.4.1 Base Width Modulation 基區(qū)寬度調(diào)制
10.4.2 High Injection 大注入效應(yīng)
10.4.3 Emitter Bandgap Narrowing 發(fā)射區(qū)帶隙變窄
10.4.4 Current Crowding 電流集邊效應(yīng)
Σ10.4.5 Nonuniform Base Doping 非均勻基區(qū)摻雜
10.4.6 Breakdown Voltage 擊穿電壓
10.5 HYBRID-PI EQUIVALENT CIRCUIT MODEL 混合π型等效電路模型
10.6 FREQUENCY LIMITATIONS 頻率限制
10.6.1 Time-Delay Factors 時延因子
10.6.2 Transistor Cutoff Frequency 晶體管的截止頻率
Σ10.7 LARGE-SIGNAL SWITCHING 大信號開關(guān)特性
Σ10.8 DEVICE FABRICATION TECHNIQUES 器件制備技術(shù)
10.8.1 Polysilicon Emitter BJT 多晶硅發(fā)射極雙極型晶體管
10.8.2 Fabrication of Double-Polysilicon npn Transistor 雙多晶硅npn晶體管的制備
10.8.3 Silicon-Germanium Base Transistor SiGe基區(qū)晶體管
10.8.4 The Power BJT 功率雙極型晶體管
10.9 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 11 Additional Semiconductor Devices and Device Concepts 其他半導(dǎo)體器件及器件概念
11.0 PREVIEW 概覽
11.1 THE JUNCTION FIELD-EFFECT TRANSISTOR 結(jié)型場效應(yīng)晶體管
11.1.1 The pn JFET pn JFET
11.1.2 The MESFET MESFET
11.1.3 Electrical Characteristics 電學(xué)特性
11.2 HETEROJUNCTIONS 異質(zhì)結(jié)
11.2.1 The Heterojunction 異質(zhì)結(jié)簡介
11.2.2 Heterojunction Bipolar Transistors 異質(zhì)結(jié)雙極型晶體管
11.2.3 High-Electron Mobility Transistor 高電子遷移率晶體管
11.3 THE THYRISTOR 晶閘管
11.3.1 The Basic Characteristics 基本特性
11.3.2 Triggering the SCR SCR的觸發(fā)機(jī)理
11.3.3 Device Structures 器件結(jié)構(gòu)
11.4 ADDITIONAL MOSFET CONCEPTS MOSFET的其他概念
11.4.1 Latch-Up 閂鎖效應(yīng)
11.4.2 Breakdown 擊穿效應(yīng)
11.5 MICROELECTRO MECHANICAL SYSTEMS (MEMS) 微機(jī)電系統(tǒng)
11.5.1 Accelerometers 加速度計
11.5.2 Inkjet Printing 噴墨打印機(jī)
11.5.3 Biomedical Sensors 生物醫(yī)學(xué)傳感器
11.6 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
CHAPTER 12 Optical Devices 光子器件
12.0 PREVIEW 概覽
12.1 OPTICAL ABSORPTION 光吸收
12.1.1 Photon Absorption Coefficient 光吸收系數(shù)
12.1.2 Electron-Hole Pair Generation Rate 電子-空穴對的產(chǎn)生率
12.2 SOLAR CELLS 太陽能電池
12.2.1 The pn Junction Solar Cell pn結(jié)太陽能電池
12.2.2 Conversion Efficiency and Solar Concentration 轉(zhuǎn)換效率與太陽光聚集
12.2.3 The Heterojunction Solar Cell 異質(zhì)結(jié)太陽能電池
12.2.4 Amorphous Silicon Solar Cells 非晶硅太陽能電池
12.3 PHOTODETECTORS 光電探測器
12.3.1 Photoconductor 光電導(dǎo)探測器
12.3.2 Photodiode 光電二極管
12.3.3 PIN Photodiode PIN光電二極管
12.3.4 Avalanche Photodiode 雪崩光電二極管
12.3.5 Phototransistor 光電晶體管
12.4 LIGHT-EMITTING DIODES 發(fā)光二極管
12.4.1 Generation of Light 光產(chǎn)生
12.4.2 Internal Quantum Efficiency 內(nèi)量子效率
12.4.3 External Quantum Efficiency 外量子效率
12.4.4 LED Devices LED器件
12.5 LASER DIODES 激光二極管
12.5.1 Stimulated Emission and Population Inversion 受激輻射與粒子數(shù)反轉(zhuǎn)
12.5.2 Optical Cavity 光學(xué)諧振腔
12.5.3 Threshold Current 閾值電流
12.5.4 Device Structures and Characteristics 器件結(jié)構(gòu)與特性
12.6 SUMMARY 小結(jié)
PROBLEMS 習(xí)題
APPENDIX A Selected List of Symbols 部分參數(shù)符號列表
APPENDIX B System of Units, Conversion Factors, and General Constants 單位制、單位換算和通用常數(shù)
APPENDIX C The Periodic Table 元素周期表
APPENDIX D Unit of Energy—The Electron-Volt 能量單位——電子伏特
APPENDIX E “Derivation” and Applications of Schr?dinger’s Wave Equation 薛定諤方程的“推導(dǎo)”和應(yīng)用
APPENDIX F Answers to Selected Problems 部分習(xí)題答案
INDEX 索引